3D Integration for NoC-based SoC Architectures by Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot,

By Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)

Back hide replica sequence: built-in Circuits and structures 3D-Integration for NoC-based SoC Architectures via: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This e-book investigates at the offers, demanding situations, and strategies for the 3D Integration (vertically stacking) of embedded platforms hooked up through a community on a chip. It covers the whole architectural layout procedure for 3D-SoCs. 3D-Integration applied sciences, 3D-Design concepts, and 3D-Architectures have emerged as issues serious for present R&D resulting in a huge variety of goods. This ebook offers a complete, system-level evaluate of three-d architectures and micro-architectures. •Presents a accomplished, system-level review of three-d architectures and micro-architectures; •Covers the full architectural layout method for 3D-SoCs; •Includes state of the art therapy of 3D-Integration applied sciences, 3D-Design options, and 3D-Architectures.

Show description

Read or Download 3D Integration for NoC-based SoC Architectures PDF

Similar electronics: radio books

ADSL,VDSL and multicarrier modulation

The state-of-the-art of multicarrier modulation for the transmission of high-speed info With DSL know-how poised to supply the quickest technique of net entry for years yet to come, there's a growing to be desire for useful details on operating xDSL companies over present mobile traces. Communications specialist John Bingham attracts on 3 a long time of intimate involvement with info transmission learn to supply a whole advisor to the cutting-edge and destiny course of multicarrier modulation (MCM)-one of the main equipment for high-speed facts transmission this present day.

3D Integration for NoC-based SoC Architectures

Again disguise replica sequence: built-in Circuits and structures 3D-Integration for NoC-based SoC Architectures by means of: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This publication investigates at the provides, demanding situations, and options for the 3D Integration (vertically stacking) of embedded platforms hooked up through a community on a chip.

Radioactive Waste Management 2000: Challenges, Solutions and Opportunities (Imeche Event Publications)

The papers during this quantity were written and taken jointly by way of a bunch of specialists, every one of whom bargains with radioactive waste administration every day, in addition to having the deep wisdom and point of craftsmanship that simply insiders can in attaining. subject matters coated right here comprise: remedy matters; waste mangement perform; shipping and garage; and surroundings and rules.

Additional resources for 3D Integration for NoC-based SoC Architectures

Sample text

With memory we mean SRAM, caches and the like but also off-chip DRAM. If μT€=€1, for each operation there is 1 memory access. Typical values will be between 1 and 3. On the other hand, the amount of memory is usually much higher than the operators. Hence, typical values for μs are between 1,000 and 10,000 as we discuss later. • Ratio of on-chip versus off-chip memory: ω: If ω€=€1, all memory is on-chip; if ω€=€0, all memory is off-chip. In a 3-D topology, with on-chip we mean all dies in the 3-D stack.

The Niagara 2 [17] processor from Sun Microsystems, which is an 8 core 64 thread processor with 4€MB of on-chip cache, falls into a similar range. Keep in mind that our model illustrates trends and limits but does not account for control logic, decoders, arbiters, etc. 7a. 7a than we intuitively expect. However, the comparison of 2-D and 3-D topologies is interesting. Due to the higher density of memory in a 3-D architecture (DRAM vs SRAM in 2-D), the area dominance of memory in 2-D is much higher than in 3-D for the same μs.

He, H. Lightsey, and P. Kohl, All-copper chip-to-substrate interconnects. Proceedings of IEEE Electronic Components and Technology Conference, pp. 67–74, 2008. 40. F. G. F. Ang, J. M. S. Tan, Achieving low temperature Cu to Cu diffusion bonding with self assembly monolayer (SAM) passivation. IEEE International Conference on 3D System Integration, art. no. 5306545, 2009. 41. F. G. F. Ang, J. M. S. Tan, Application of Self Assembly Monolayer (SAM) in Cu–Cu Bonding Enhancement at Low Temperature for 3-D Integration, Advanced Metallization Conference, Baltimore, October 13–15, 2009.

Download PDF sample

Rated 4.55 of 5 – based on 45 votes