A Controllable Resistor with Features of a Field-Effect by A.G.Akimov, M.Yu.Barabanenkov, M.L.Baranochnikov,

By A.G.Akimov, M.Yu.Barabanenkov, M.L.Baranochnikov, A.V.Leonov, A.D.Mokrushin, and N.M.Omel'yanovskaya

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Riley, ‘GPhone prototype debuts at mobile world congress’, Tech Crunch, February 11, 2008. [4] A. ’, Google Blog, November 11, 2007. html [December 29, 2008]. [6] B Gaucher, B. Floyd, S. Reynolds, U. Pfeiffer, J. Grzyb, A. Joseph, E. Mina, B. Orner, H. Ding, R. Wachnik, and K. Walter, ‘Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems’, Semiconductor Science and Technology 22(1) (2007), S236– S243. [7] S. Reynolds, B. Floyd, U. Pfeiffer, T. Beukema, J.

Such a power detector may be used to test dies without highfrequency probes and external test equipment. Each output pad simply needs to be terminated MILLIMETER-WAVE PACKAGING 27 with a 50 antenna or probe to provide accurate power readings. No external test equipment would be needed. A higher circuit-level integration, therefore, is inherently more reliable than any MCM or MMIC technology can be. However, the fact that the antenna is integrated into the package might cause some increased temperature-activated failures owing to higher stress at the antenna interconnect [14].

Silicon IC surfaces are passivated and interconnect passives are less sensitive to encapsulation materials in contact with the IC surface. as silicon monolithic millimeter-wave integrated circuits (SIMMWICs) [24]. Unlike these, silicon ICs may also use the metal stack of the so-called back-end-of-the-line (BEOL) for interconnects. In this case, the dielectric material is silicon dioxide (SiO2 ) as opposed to the silicon substrate material. The silicon IC interconnects are therefore confined in a vertical space that is an order of magnitude thinner (10 µm) than in MMIC technologies.

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