Advanced Power MOSFET Concepts by B. Jayant Baliga

By B. Jayant Baliga

"Advanced strength MOSFET recommendations" presents an in-depth therapy of the physics of operation of complicated strength MOSFETs. Analytical versions for explaining the operation of the entire complicated strength MOSFETs are built and defined. the result of numerical simulations are supplied to offer extra perception into the equipment physics and validate the analytical versions. the result of two-dimensional simulations also are given, as a way to corroborate the analytical types and provides additional perception into the gadget operation. This quantity additionally: -Discusses units which may have an important effect on bettering the potency of the voltage-regulator-modules used to convey strength to microprocessors and snap shots chips in laptops and servers -Covers purposes in all decrease voltage circuits, specially the car electronics quarter contains numerical simulation examples to give an explanation for the working physics and validate the types - deals broad assurance of the function of silicon carbide within the layout and constitution of strength rectifiers "Advanced energy MOSFET ideas" is a must-read for researchers and practising engineers within the strength equipment industry.

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1 The D-MOSFET Structure A cross-section of the basic cell structure for the D-MOSFET structure is illustrated in Fig. 1. This device structure is fabricated by starting with an N-type epitaxial layer grown on a heavily doped Nþ substrate. The channel is formed by the difference in lateral extension of the P-base and Nþ source regions produced by their diffusion cycles. Both regions are self-aligned to the left-hand-side and righthand-side of the gate region during ion-implantation to introduce the respective dopants.

4. J. Baliga, “Modern Power Devices”, Wiley, New York, 1987. 5. J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982. 6. J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985. 7. M. M. J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992. 8. W.

Consequently, a significant fraction of the applied drain voltage is supported across a depletion region formed in the P-base region. 5 V as discussed in the previous section. For the allowable maximum P-base doping concentration, it is desirable to make the depth of the P-base region as small as possible to reduce the channel length in the power MOSFET structure. However, if the junction depth of the P-base region is made too small, the depletion region in the P-base region will reach through to the N+ source region leading to a reduced breakdown voltage.

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