BiCMOS Technology and Applications by A. R. Alvarez (auth.), A. R. Alvarez (eds.)

By A. R. Alvarez (auth.), A. R. Alvarez (eds.)

The subject of bipolar appropriate CMOS (BiCMOS) is an engaging one and of ever-growing sensible value. The "technology pendulum" has swung from the 2 extremes of preeminence of bipolar within the Fifties and 60s to the plain never-ending horizons for VLSI NMOS know-how through the Nineteen Seventies and 80s. but beginning within the Nineteen Eighties severallimits have been clouding the horizon for natural NMOS expertise. CMOS reemerged as a· practicable excessive density, excessive functionality know-how. equally by means of the mid Eighties scaled bipolar units had not just established new excessive pace files, yet early models of combined bipolar/CMOS expertise have been being produced. as a result the paradigm of both excessive density . Q[ excessive pace used to be metamorphasizing into a chance for either velocity and density through a BiCMOS process. Now as we procedure the Nineties there were a few functional demonstrations of BiCMOS either for reminiscence and good judgment functions and that i anticipate the craze to enhance over the subsequent decade. This ebook makes a well timed contribution to the sector of BiCMOS know-how and circuit improvement. The evolution is now certainly fast in order that it truly is tricky to make this kind of e-book exhaustive of present advancements. most likely both tough is the truth that the hot expertise opens a variety of novel circuit possibilities which are as but purely formative of their improvement. Given those stumbling blocks it's a herculean job to attempt to gather a booklet on BiCMOS.

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Anatha "BiCMOS Roadmap". Chapter 2 Device Design J. 0 Introduction The increasing acceptance of BiCMOS as a viable technology has brought to the forefront new challenges for the device physicist/designer. Ultimately, the device designer wishes to optimize the performance of the transistors while simultaneously maintaining process simplicity. Tbe challenge to achieve this in the BiCMOS environment is heightened because the process requirements for the MOSFET and bipolar transistors often conflict with one another.

17). Because ofthe P+ buried layer that is used undemeath the NMOS to electrically isolate adjacent N-well tubs, the epi must be thick enough to prevent the updiffusion of this P+ buried layer from excessively increasing NMOS junction capacitance and body effect.

E. C. Pifer", New High Voltage IC Technology", 1984 Int. Electron Devices Meeting pp. 262-265. T. Gallager, "Single Chip Carries Three Technologies," Electronics Week, Dec. 10, 1984, p. 28. 13] H. Higuchi, G. Kitsukawa, T. Ikeda, Y. Nishio, "Performance and Structures of Scaled-Down Bipolar Devices Merged with CMOSFETs," Int. Electron Devices Meeting, p. 694- 697, 1984. 14] J. Miyamoto, S. Saitoh, H. Momose, H. Shibata, K. Kanzaki, S. UJl N-Well CMOS! Bipolar Technology For VLSI Circuits", 1984 Int.

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