Code optimizers and register organizations for vector by Lee C.G.

By Lee C.G.

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Electron - photon interactions are much more efficient in the direct band-gap materials as they do not require an associated phonon scattering event. The direct band-gap also leads to some desirable consequences for electron transport, and in particular is consistent with the high electron velocities achievable in GaAs. A visual representation of the direct/indirect band-gap properties of GaAs and Si is presented in Fig. 2-2. For completeness, it is appropriate to mention that the cause of the unusual shape to the velocity – electric field curve for GaAs is that a secondary conduction band minimum (or valley) exists which is offset in momentum from the valence band peak.

Such highly doped layers are suitable for the production of non-alloyed ohmic contacts (critical for low resistance contacts to the semiconductor devices). MBE also has the advantage of smoothening the surface of the GaAs layer during growth. This makes this technique very attractive for the growth of hetero-junctions, superlattices and other multi-layered structures, where Chapter 2 22 the planar characteristics of each layer depend strongly on the planar characteristics of the layer underneath.

The long thin protrusion from the left side of the probe body contains the RF probe tips in a ground-signal-ground configuration. This probe arrangement is shown in the sketch in Fig. 2-5. The mechanical outline of a high frequency Picoprobe is shown in more detail in Fig. 2-6. The probe is HIGH FREQUENCY MATERIALS AND TECHNOLOGY 29 mounted onto the probe station and must be carefully adjusted for planarity. The probe tips are very delicate and must be handled with care at all times. 4 Dicing/sawing considerations To facilitate convenient dicing of the wafer after fabrication such that the individual die can be poked and packaged, adequate space must be allowed between the die on the GaAs through which the dicing or sawing tool can pass without damaging the fabricated circuits.

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