ESD: Circuits and Devices by Steven H. Voldman

By Steven H. Voldman

The scaling of semiconductor units from sub-micron to nanometer dimensions is riding the necessity for knowing the layout of electrostatic discharge (ESD) circuits, and the reaction of those built-in circuits (IC) to ESD phenomena.

ESD Circuits and units offers a transparent perception into the structure and layout of circuitry for cover opposed to electric overstress (EOS) and ESD.В  With an emphasis on examples, this article:

  • explains ESD buffering, ballasting, present distribution, layout segmentation, suggestions, coupling, and de-coupling ESD layout tools;
  • outlines the elemental analytical versions and experimental effects for the ESD layout of MOSFETs and diode semiconductor equipment parts, with a spotlight on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) know-how;
  • focuses at the ESD layout, optimization, integration and synthesis of those parts and ideas into ESD networks, in addition to using in the off-chip driving force networks, and on-chip receivers; and
  • highlights state of the art ESD enter circuits, in addition to ESD energy clamps networks.

carrying on with the author’s sequence of books on ESD, this e-book could be a useful reference for the pro semiconductor chip and process ESD engineer.  Semiconductor machine and method improvement, caliber, reliability and failure research engineers also will locate it a vital tool.  additionally, either senior undergraduate and graduate scholars in microelectronics and IC layout will locate its a number of examples helpful.

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Extra info for ESD: Circuits and Devices

Sample text

Shunt circuit for electrostatic discharge protection. S. Patent No. 5,287,241, February 15, 1994. This introduced the first RC-triggered p-channel MOSFET-based ESD power clamp network [42]. D. J. Pianka (AT&T). ESD protection of output buffers. S. Patent No. 5,345,357, September 6, 1994. Development of RC-trigger and gate coupling circuit elements for activation of the output of an n-channel MOSFET pull-up and pull-down offchip driver (OCD). This ESD technique is especially valuable for small computer system interface (SCSI) chips, since only n-channel output transistors are used as the pull-up and pull-down elements [43].

D. T. J. Maloney (Intel). Electrostatic discharge protection circuits using biased and terminated PNP transistor chains. S. Patent No. 5,530,612, June 25, 1996. Maloney’s patent application was a second ESD circuit application to address the leakage amplification in diode string ESD networks. This was applied to advanced microprocessors for mixed-voltage applications [44]. D. S. Voldman, S. Geissler, and E. Nowak (IBM). Semiconductor diode with silicide films and trench isolation. S. Patent No.

1 Heat capacity Heat capacity of a medium is the ability of a medium to store energy. 2 Thermal diffusion Thermal transport occurs as a result of a gradient in the temperature field. Thermal conduction occurs as a result of thermal diffusion. 3 Heat transport equation ESD phenomena involves both electrical and thermal phenomena. The temperature field in a medium can be determined from the differential equation of heat conduction. The temperature at any point in the medium can be quantified by understanding the energy balance in a given region.

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