Fundamentals of Power Semiconductor Devices by B. Jayant Baliga

By B. Jayant Baliga

Definitely worth the wait and the cost. the best books masking energy semiconductor units. for individuals trying to find IGBTs, it is a should have publication. the present model is extra complete than earlier ones and comprises fresh traits.

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Based upon this empirical data, analytical expressions can be derived relating the drift velocity to the electric field. For the analysis of power devices, it is convenient to define an average mobility as the ratio of the drift velocity to the electric field in the semiconductor. 83 At electric fields below 103 V cm−1, the mobility for electrons and holes has a constant value and becomes inversely proportional to the electric field when it exceeds 105 V cm−1. E+06 6 10 Electric Field (V/cm) Fig.

6), that are tailored to the unique properties of SiC. 4 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES Zero-Bias Depletion Width The calculated zero bias depletion widths for silicon and 4H-SiC are shown in Fig. 8 as a function of the doping concentration on the lightly doped side of an abrupt P–N junction. For both silicon and silicon carbide, it can be seen that the zero bias depletion width can be substantial in size at low doping concentrations, making it important to take this into account during device design and analysis.

The dependence of the mobility upon the electric field strength must be accounted for during the analysis of the electrical characteristics of power devices. Temperature Dependence At low doping concentrations in the semiconductor region, the scattering of free carriers occurs predominantly by interaction with the lattice vibrations. This lattice scattering phenomenon can occur by means of either acoustical phonons or optical phonons. Optical phonon scattering is important at high temperatures and electric fields while acoustical phonon scattering is dominant at low electric fields.

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