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Extra resources for Hall-Effect integrated series К1116КП
Shunt circuit for electrostatic discharge protection. S. Patent No. 5,287,241, February 15, 1994. This introduced the first RC-triggered p-channel MOSFET-based ESD power clamp network . D. J. Pianka (AT&T). ESD protection of output buffers. S. Patent No. 5,345,357, September 6, 1994. Development of RC-trigger and gate coupling circuit elements for activation of the output of an n-channel MOSFET pull-up and pull-down offchip driver (OCD). This ESD technique is especially valuable for small computer system interface (SCSI) chips, since only n-channel output transistors are used as the pull-up and pull-down elements .
D. T. J. Maloney (Intel). Electrostatic discharge protection circuits using biased and terminated PNP transistor chains. S. Patent No. 5,530,612, June 25, 1996. Maloney’s patent application was a second ESD circuit application to address the leakage amplification in diode string ESD networks. This was applied to advanced microprocessors for mixed-voltage applications . D. S. Voldman, S. Geissler, and E. Nowak (IBM). Semiconductor diode with silicide films and trench isolation. S. Patent No.
1 Heat capacity Heat capacity of a medium is the ability of a medium to store energy. 2 Thermal diffusion Thermal transport occurs as a result of a gradient in the temperature field. Thermal conduction occurs as a result of thermal diffusion. 3 Heat transport equation ESD phenomena involves both electrical and thermal phenomena. The temperature field in a medium can be determined from the differential equation of heat conduction. The temperature at any point in the medium can be quantified by understanding the energy balance in a given region.